Multichip wafer level packages and computing systems incorporating same

ABSTRACT

The present invention defines a packaging implementation providing a multichip multilayer system on a chip solution. Greater integration of a plurality and variety of known good die contained within cavities formed in a separate substrate is achieved. Additional redistribution and interconnect layers above the multichip configuration may be formed with the redistribution layers terminating in electrical connections such as conductive bumps or balls. In one embodiment, the substrate cavities receive signal device connections, such as conductive bumps, of a plurality of semiconductor dice in a flip-chip configuration. A portion of the substrate&#39;s back surface is then removed to a depth sufficient to expose the conductive bumps. In another embodiment, the cavities receive the semiconductor dice with their active surface facing up wherein metal layer connections are formed and coupled to bond pads or other electrical connectors of the semiconductor dice. Computing systems incorporating the packaging are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of copending application Ser. No.10/656,352, filed Sep. 5, 2003, now U.S. Pat. No. 6,825,553, issued Nov.30, 2004, which is a divisional of application Ser. No. 10/229,914,filed Aug. 27, 2002, pending.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor packaging. Moreparticularly, the present invention relates to wafer level multichippackaging such as, for example, a system in a package solution.

2. State of the Art

Semiconductor chips (also referred to as die/dice herein) are found inmany electronic products today. As semiconductor dice get smaller andmore complex, the problem of making electrical connections betweensemiconductor dice, connections to carrier substrates such as printedcircuit boards, and connections to intermediate substrates such asmultichip modules which are, in turn, connected to carrier substrateshas been addressed with a variety of constantly evolving solutions.

One of the earlier solutions included wire bonding from signalconnection devices, such as bond pads of a semiconductor die, to pins orleads of a lead frame contained in a ceramic or plastic package.Finished packages are mounted to a carrier substrate, such as a printedcircuit board, where the pins or leads make electrical connection withcontact pads on the carrier substrate.

The term “signal connection devices” as used herein regardingsemiconductor devices includes not only contact pads of a substrate andbond pads of a semiconductor device but also I/O connections for asemiconductor device created by adding circuitry from bond pads locatedon the active surface of the semiconductor device to different locationson the active surface of the semiconductor device. Such additionalcircuitry is typically effected using a so-called “redistribution layer”extending over the active surface or a surface of a semiconductor die.

An evolution of electrical connection technology occurred when multiplesemiconductor dice were mounted on an intermediate substrate. In thisinstance, the semiconductor dice are typically connected to a lead frameby way of bonding wires. Signals, or electrical connections, requiredfor coupling with an external device, such as a circuit board, arebrought out to contact pads, pins or leads of the multichip modulepackage. Other signals or electrical interconnections may be establishedbetween multiple semiconductor dice by way of circuitry formed on theintermediate substrate.

In these solutions, using wires for connecting a semiconductor die to asubstrate and wire bonding processes can create problems. Such problemsmay include, for example, size and pitch (spacing) requirements for thebond pads of the semiconductor die and contact pads of the substrate;inductance in the signals due to the long curved wires; wire bondbreakage and wire sweep causing shorting between adjacent wires; andhigh signal frequency semiconductor dice making the wire bonding processdifficult and expensive.

Flip-chip technologies using solder balls or bumps have helped toalleviate some of these problems. For example, instead of wire bonding,conductive bumps such as, for example, balls of solder may be formed atthe locations of the bond pads of a semiconductor die. A specializedlead frame, a dielectric tape carrying circuit traces as used in tapeautomated bonding processes, or other carrier substrates such as aprinted circuit board may have electrical connection locations such asterminals which correspond to the placement of the solder balls on thebond pads of the semiconductor die. The semiconductor die is “flipped”upside down so the solder balls are placed, for example, on the contactpads of a carrier substrate. A solder reflow process heats the solderballs until the solder begins to flow and bond with a correspondingcontact pad of a carrier substrate. Upon cooling, the solder forms bothmechanical and electrical connections between the carrier substrate andthe semiconductor die. This packaging solution may alleviate at leastsome of the inductance problems, allowing for higher frequencyperformance and better signal integrity of the semiconductor die. Also,to a certain extent, it allows the contact pads of a substrate whereconductive bumps were formed to be larger, more widely pitched andplaced anywhere on the semiconductor die active surface rather than justaround the periphery or down the center thereof.

Chip scale packaging has evolved from various standard flip-chipprocesses to a configuration wherein the size of a package is reduced toonly slightly larger than the size of the semiconductor die. Chip scalepackages are typically created using an interposer substrate. Thesemiconductor die, with solder balls or bumps such as described above,is attached and electrically connected to the interposer substrate andan encapsulation material is applied over the chip for protectionthereof from the elements. The interposer substrate can redistributesignal connections to new locations so they are physically positioned ina desired pattern or arrangement, or to just a different pitch moresuitable for mounting to an interposer substrate. An additional set ofconductive bumps may then be formed at other contact pad locations onthe interposer substrate. The resulting package may then be attached toa carrier substrate such as a printed circuit board.

Chip scale packaging enables small packages using desired ball gridarrays or fine ball grid arrays. However, the interposer substrate istypically made of an organic material which is the same as, or similarto, that used for printed circuit boards. There is conventionally asignificant mismatch in the coefficients of thermal expansion (CTE) ofthe interposer substrate and the semiconductor die, often resulting insubstantial stress on the mechanical and electrical interconnectionsformed between the semiconductor die and interposer substrate (e.g., areflowed solder connection) during the normal thermal cycling duringnormal operation of the semiconductor die. The use of a ceramicsubstrate may alleviate some of the CTE mismatch concerns but at aconsiderably higher cost relative to more conventional interposersubstrates.

Another advance in the area of multichip modules includes wafer scaleintegration. Wafer scale integration generally comprises fabricatingmultiple types of functional semiconductor dice on a single wafer. Forexample, a four-chip system may be created by placing a microprocessornext to a memory controller and two memory-type semiconductor dice. Thispattern may then be repeated across the entire wafer. After fabrication,the wafer is sawed into individual segments with each segment containingthe four different functions. However, this approach has not been a verysatisfactory solution due to yield problems created by the variations inprocesses for forming processors and various types of memory-typesemiconductor dice. For example, if a defect causes any one of the fourfunctions to be inoperable, the entire segment is defective and notusable.

In addition to that described above, there have been advances in bumptechnologies where the conductive bumps act as the signal connectiondevice. Conventional solder bumps, in some cases, have been replaced bystud bumps. Stud bumps have conventionally been gold, but copper andplated-type stud bumps have also been used recently. The stud bumps mayactually comprise short wires or wire stubs applied to a semiconductordie using a conventional wire bonding process. Stud bumping has theadvantages of using a more cost effective wire bonding process forapplication of the bumps in comparison to the more complex, multistepsolder bumping process. Further, conductive and conductor-filledadhesives have also been employed to attach the conductive bumps to acarrier substrate. The conductive or conductor-filled adhesive mayprovide an amount of flexibility to the mechanical and electricalconnection, thereby compensating for some of the problems associatedwith the mismatch of CTE often associated with solder bump processes asdiscussed above.

However, in light of the advances made in fabricating semiconductordevice packages, there is a continued need for a reliable, costeffective solution with a higher integration of various functionalsemiconductor dice in a single package to produce, for example, a systemon a semiconductor die solution. There is also a need to create smallerpackages with more consistent thermal expansion properties whileenabling the redistribution of signal connection devices of the varioussemiconductor dice to a more convenient, possibly denser, and optionallystandard configuration for attachment to a carrier substrate.

Finally, it would be advantageous to provide a system on a chippackaging solution using known good dice, such use thereby increasingthe yield of usable packages and, thus, improving the efficiency andcost effectiveness associated with producing such packages.

BRIEF SUMMARY OF THE INVENTION

The present invention includes new packaging implementation methods tosolve or at least reduce some of the problems encountered in the priorart. Generally, the present invention provides a multichip multilayersystem on a chip-type solution. Greater integration is accomplishedusing a plurality and variety of known good dice contained withincavities formed in a separate silicon substrate. The term “variety”includes semiconductor dice of not only different types (microprocessor,logic, memory, etc.) but functionally similar semiconductor dice ofdifferent dimensions and I/O arrangements. The present invention alsocontemplates the use of so-called “known good die,” or KGD, as thesemiconductor dice to be packaged.

The present invention enables the use of processes for makingsilicon-type semiconductor dice for creating additional redistributionand interconnect layers in the same plane or same planes verticallyoffset from the multichip arrangement. These additional layers may thenbe terminated with conductive bumps, optionally in a standardconfiguration, at the top layer for typical flip-chip application of theassembly to a carrier substrate such as printed circuit board or othermultichip module substrate.

According to one embodiment of the present invention, a plurality ofcavities is etched into the top of a substrate, such as a silicon wafer.The cavities are sized, configured and located to physically receivesignal connection devices of a plurality and variety of types ofsemiconductor dice. The signal connection devices on the semiconductordie may be formed, for example, as gold stud bumps. A semiconductor dieattach material adhesive with a high dielectric constant is applied tothe top surface of the substrate and in the cavities. The substrate, awafer, having the semiconductor dice thereon is flipped upside down andplaced such that the signal connection devices are received by thecavities with the bond pads on the active surface of each semiconductordie making contact with the die attach material. A layer of moldingcompound is formed over the top of the substrate and over the backs ofthe various semiconductor dice. This molding compound creates thepackage structure, adds mechanical stability, and protects thesemiconductor dice from the elements. A portion of the back surface ofthe substrate is removed, such as by back-grinding or another suitableprocess, until the signal connection devices are exposed through theback surface of the substrate. With the signal connection devicesexposed, a dielectric layer is formed over the entire back surface ofthe wafer. The dielectric layer is then etched to expose the signalconnection devices for use in connection to higher-level packaging.

According to another embodiment of the invention, a plurality ofcavities is formed in the top surface of a substrate. The cavities areformed to receive the substantial entirety of each of the varioussemiconductor dice of a plurality to be packaged. Therefore, thecavities are individually sized and configured to correspond with thebond pads of each individual semiconductor die type that is used. It maybe desirable to configure the cavities such that the active surface of asemiconductor die placed therein is approximately flush with the surfaceof the substrate. A die attach material is placed in the die cavitiesand the semiconductor dice are placed in the cavities with the activesurface of each semiconductor die facing upwards and such that the backsurfaces of the semiconductor dice contact the die attach material inthe bottoms of the cavities. A dielectric layer is formed over the topsof the semiconductor dice, over the top of the substrate and into anygaps between the dice and the cavity sidewalls. Finally, vias are formedin the dielectric layer to expose signal connection devices on thevarious semiconductor dice.

The semiconductor device packages according to the present invention mayfurther undergo a redistribution layer (RDL) process to form signalinterconnections between semiconductor dice of the package or toredistribute signals from the signal connection device locations of thevarious types of semiconductor dice to more convenient and optionallystandard locations for interconnection with an external device orcomponent. In the redistribution layer process, a metal layer isdeposited and patterned to create an interconnect layer from the exposedsignal connection device (e.g., contact pad or conductive bump)locations to other locations.

Additional signal layers may be formed if so desired. This signallayering process includes three primary acts: first, a new dielectriclayer is formed on the wafer; next, vias are formed in the dielectriclayer so connections to an underlying metal layer may be formed; andfinally, a new layer of metal is deposited and patterned to create aninterconnect on this new layer as well as connections to the underlyinglayer through the vias.

Once the signal layering process is completed for the number ofadditional interconnect layers desired, a final interconnect layer isformed. At this juncture, a new dielectric layer is formed on the wafer.Next, openings are formed in the dielectric layer sufficient for theformation of new signal connection devices and for connections to theunderlying metal layer. Finally the new signal connection devices, suchas conductive bumps in the form of solder balls, are formed in theopenings.

At this point, if desired, testing may be accomplished through thesolder balls on each of the individual silicon wafer segments containinga complete system on a wafer segment including various types ofsemiconductor dice. Finally, the process is completed by sawing thewafer into multichip segments, creating a plurality of individualmultichip multilayer systems on chip packages, each ready for test andassembly.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the drawings, which illustrate what is currently considered to be thebest mode for carrying out the invention:

FIGS. 1A through 1F show cross-sectional views of a system package atvarious stages of fabrication according to an embodiment of the presentinvention;

FIGS. 2A through 2D show cross-sectional views of a system package atvarious stages of fabrication according to another embodiment of thepresent invention;

FIGS. 3A through 3F show cross-sectional views of a system packageincluding a redistribution layer according to another embodiment of thepresent invention;

FIG. 4 is a plan view showing a wafer including a plurality of sections,each containing a plurality of semiconductor dice, according to thepresent invention;

FIG. 5 is a plan view showing a plurality of multichip modules accordingto the present invention on a memory device; and

FIG. 6 is a block diagram showing a memory device including at least oneof the multichip modules according to the present invention incorporatedin a computing system.

DETAILED DESCRIPTION OF THE INVENTION

Referring to drawing FIGS. 1A through 1F, the process of manufacturing apackaged semiconductor device according to an embodiment of the presentinvention is shown. Illustrated in drawing FIG. 1A is a cross-sectionalview of a bare substrate 102. The substrate 102 material may include aconventional silicon wafer or other bulk silicon substrate such as iswell known in the art. However, it is understood that this substrate 102may comprise other well-known substrates such as a ceramic or othersuitable material. A plurality of cavities 105 is formed in a topsurface 104 (also referred to as an attachment surface) of the substrate102, such as through a conventional anisotropic silicon etching process.The cavities 105 are each defined by a cavity base 108 and cavity walls110. As indicated in drawing FIG. 1A, the cavity walls 110 may be formedto exhibit a generally rectangular geometry in cross section such thatthe cavities 105 are generally cubic in shape. However, the cavities 105may exhibit other geometries such as, for example, cylindrical, conical,frustoconical, pyramidal, frustopyramidal or semispherical.

Referring next to drawing FIG. 1B, the top surface 104 of the substrate102 is coated with a layer of die attach material 112 such as a dieattach material which may be applied in a generally liquid form and thensoft-baked or cured to a B-stage. The die attach material may includeepoxy resins and polyimides, as well as organic and polymer-basedresins. Exemplary die attach materials include resins derived fromB-stage benzocyclobutene (BCB) and which are available from Dow ChemicalCompany of Midland, Mich. The die attach material 112 may be applied tothe substrate using a conventional spin or spray coating process whereinthe top surface 104 of the substrate 102 is coated and the cavities 105are filled with the die attach material 112 as will be appreciated bythose of ordinary skill in the art. The die attach material 112 materialmay desirably exhibit, for example, a dielectric constant up toapproximately three to ensure adequate electrically insulativeproperties. It is noted that the soft-bake or B-stage curing of the dieattach material 112 helps to prevent movement of the semiconductor dice114 relative to the substrate 102 during subsequent baking or curingoperations.

A plurality of discrete semiconductor dice 114 is provided, each havinga plurality of signal connection devices, shown as conductive bumps 116,attached to bond pads 115. The semiconductor dice 114 are placed upsidedown with the conductive bumps 116 positioned in the cavities 105 andwith the active surface 118 of the semiconductor dice 114 in contactwith the die attach material 112. It is noted that the size of thecavities 105 may be etched slightly larger in breadth and/or depth thanthe size of the conductive bumps 116 in order to ensure proper fit ofthe conductive bumps 116 within the cavities 105. The conductive bumps116 may be formed, for example, as gold stud bumps applied with aconventional wire bond process. Other signal connection devices, such ascopper stud bumps or plated-type stud bumps may also be used. Althoughdrawing FIGS. 1C through 1F show the conductive bumps 116 as generallyspherical balls, the conductive bumps 116 may actually be formed inother shapes, including pillars and columns.

In addition, for simplicity, drawing FIGS. 1A through 1F show a singlerow of conductive bumps 116 positioned extending down the longitudinalaxis of each of the semiconductor dice 114, which longitudinal axis isoriented transverse to the plane of the page. However, other conductivebump arrangements such as, for example, an arrangement around theperiphery of a semiconductor die 114 or an array of conductive bumps 116across the active surface 118 of a semiconductor die 114 are also withinthe scope of the present invention. Furthermore, the semiconductor dice114 may be of more than one functional variety appropriately arranged soas to create what is referred to as a system on a chip, as will bedescribed in further detail below.

With the semiconductor dice 114 attached to the substrate 102, a moldingor encapsulating layer 119 is formed over the top surface 104 of thesubstrate 102 and the back side 120 of the semiconductor dice 114 asshown in drawing FIG. 1D. The molding layer 119 may be any of a varietyof compounds known in the art for the purpose of encapsulating thesemiconductor dice 114 and substrate 102 to form a typical chip scalepackage. The molding layer 119 may include a filled polymer and maydesirably comprise a material having properties sufficient to allow itto withstand temperatures of up to about 300° C. without substantialdegradation thereof.

After the molding layer 119 is disposed on the top surface 104 of thesubstrate 102 and properly cured, a portion of the substrate 102 alongits bottom surface 106 is removed as is shown in drawing FIG. 1E. It isnoted that, for purposes of clarity, the assembly, as shown in drawingFIG. 1E (as well as in subsequent drawing FIG. 1F), is flipped upsidedown relative to that which is shown in drawing FIGS. 1A through 1D. Theportion of material may be removed from the bottom surface 106 of thesubstrate 102 by techniques such as back-grinding, abrasiveplanarization techniques such as chemical-mechanical planarization(CMP), etching or an atmospheric downstream plasma (ADP) process offeredby Tru-Si Technologies of Sunnyvale, Calif., which is known by those ofordinary skill in the art. Material is removed from the bottom surface106 of the substrate 102 until the conductive bumps 116 are exposed,creating a new bottom surface 106′ (also referred to as an opposingsurface) of the substrate 102, as shown in drawing FIG. 1E. With theconductive bumps 116 exposed, a system on a chip structure has beencreated with an array of exposed conductive bumps 116.

To prepare the wafer for a redistribution layer (RDL) process, adielectric layer 122 is formed covering the new bottom surface 106′ ofthe wafer and the conductive bumps 116, as shown in drawing FIG. 1F.Finally, a plurality of vias or openings 124 is formed in the dielectriclayer 122 over the conductive bumps 116, such as with a conventionaletching process. The assembly may then be subjected to an RDL process toredistribute or relocate the signals to an arrangement of signal deviceor input/output connections.

Before describing the redistribution layer process, another embodimentof the present invention is described as shown in drawing FIGS. 2Athrough 2D. The process begins, as in the previously describedembodiment, with a substrate 202 such as a silicon wafer as shown indrawing FIG. 2A. Again, cavities 205 are formed in the substrate 202,each cavity being defined by a cavity base 208 and cavity walls 210.However, in the presently described embodiment, the cavities 205 are ofa size sufficient to receive substantially the entirety of eachindividual semiconductor die 214. Additionally, the cavities 205 areformed to a depth short of back side 206 sufficient to allow the activesurface 220 of the semiconductor dice 214 to be substantially flush withthe top surface 204 of the substrate 202. It is noted that, sincedifferent types of semiconductor dice 214 may be used, the cavities 205may accordingly differ in size and shape from one cavity to another.

As shown in drawing FIG. 2B, a layer of die attach material 218 isapplied in the cavities 205. Discrete semiconductor dice 214 are thenplaced in the cavities 205 with the active surface 220 of thesemiconductor dice 214 facing upwards and the back surface 216 of thesemiconductor dice 214 being attached to the base 208 of its respectivecavity 205 via the die attach material 218. As shown in drawing FIG. 2C,a first dielectric layer 222 is applied over the top surface 204 (alsoreferred to as a first surface) of the substrate 202 and which may fillin any gaps 221 between the sides of the semiconductor dice 214 and thecavity walls 210. The first dielectric layer 222 may be applied in aconventional process such as spin coating or spray coating. Finally, asshown in drawing FIG. 2D, a plurality of vias or openings 224 is formedin the first dielectric layer 222, such as by an etching process,thereby exposing the plurality of underlying signal connection devicesshown as bond pads 215.

The RDL process, which is applicable to both of the exemplaryembodiments discussed above, is shown and described with respect todrawing FIGS. 3A through 3F. Illustrated in drawing FIG. 3A is a generalsubstrate 302 with embedded semiconductor dice 304 and signal connectionopenings 306 representing any embodiment within the scope of theinvention. The process begins, as shown in drawing FIG. 3B, by ametallization layer and patterning process to create a first circuitconnection layer 308 of metal covering the plurality of signalconnection openings 306. In the exemplary embodiments, the signalconnection openings 306 expose either the conductive bumps 116 in theembodiment shown and described with respect to drawing FIGS. 1A through1F or the bond pads 215 in the embodiment shown and described withrespect to drawing FIGS. 2A through 2D. This results in an electricalconnection to the underlying semiconductor dice 304 and creates firstcircuit connection layer 308, shown as circuit lines, to redistributeand possibly connect the signals to other metallization layers.

The RDL process may incorporate metallization layer deposition andetching processes well known in the art to form the pattern of openingsand first circuit connection layers 308. Further, the metal layer may beformed of a material including, for example, aluminum, copper, or otheralloys known and utilized in the art. It is also noted that signalconnection devices (e.g., the conductive bumps 116 of drawing FIG. 1C orthe bond pads 215 of drawing FIG. 2C) may be treated or have anunder-bump metallization-type material placed thereon prior toconnection with the first circuit connection layer 308 to enhancemetallic adhesion therebetween.

A predetermined number of additional metal layers may be added in abasic three-step signal connection layering process as shown in drawingFIGS. 3C and 3D. For example, a new additional dielectric layer 310 isformed over the previous metal and dielectric layers, coating the entirewafer. Next, a plurality of vias or openings 312 is created in thedielectric layer 310, such as by etching, exposing the underlying firstcircuit connection layer 308 at a desired plurality of circuitconnection areas. Finally, a new metallization and patterning processcreates a new circuit connection layer 314, shown in drawing FIG. 3D,making desired electrical connections to the underlying first circuitconnection layer 308 and redistributing signals to new locations,possibly for connection to higher metal layers. For simplicity, thedrawing FIGS. 3A-3D show the formation of only one additional metallayer. However, this process may be repeated a predetermined number oftimes (for example, three times to create three intermediate signalrouting layers), thereby forming a laminate-type structure. Multiplelayers may be desired to create power planes, ground planes, anddifficult signal interconnections not easily accomplished on two signallayers.

As shown in drawing FIGS. 3E and 3F, a final dielectric layer 316 isapplied over the previous dielectric layer 310 and circuit connectionlayer 314. Again, a conventional etching process is used to create aplurality of vias or openings 318 in the final dielectric layer 316exposing the underlying circuit connection layer 314. Finally, newsignal device connections 320, such as solder balls or other conductivebumps, are formed in the plurality of openings 318 contacting theunderlying circuit connection layer 314.

With the new signal device connections 320 formed, if desired, testingcould be accomplished through connection with the new signal deviceconnections of each of the individual multichip packages.

Referring now to drawing FIG. 4, an assembly 400 containing a pluralityof semiconductor dice 404A-404D (collectively referred to assemiconductor dice 404) is shown according to an embodiment of thepresent invention. The substrate 402 is sawed into individual segments406 along sawing lines 408 to form individual systems on chip moduleswith each segment 406 containing a plurality of semiconductor dice404A-404D possibly of multiple functional varieties. For example,semiconductor die 404A might be a processor, semiconductor die 404Bmight be a memory controller and semiconductor dice 404C and 404D mightbe memory chips. Although drawing FIG. 4 shows a segment 406 containingfour semiconductor dice 404A-404D, it should be understood that thenumber of semiconductor dice within a segment 406 may be some othernumber depending on the design and intended use of the resultingsemiconductor package.

Referring now to drawing FIG. 5, a memory device 500, also referred toas a memory module, is shown which incorporates at least one packagedmultichip semiconductor device 510 according to the present invention.The memory device 500 includes a carrier substrate 520, such as aprinted circuit board, to which one or more packaged multichipsemiconductor devices 510 may be electrically and operably coupledtherewith. A plurality of electrical connectors 530 is formed on thecarrier substrate 520 to provide input and output connections with anexternal device, such as, for example, the motherboard of a computer, tothe one or more packaged multichip semiconductor devices 510.

Referring now to drawing FIG. 6, a computing system 600 is shown whichincludes a carrier substrate 602 such as, for example, a motherboard.The carrier substrate 602 may be operably coupled to at least oneprocessor 604, such as, for example, a central processing unit (CPU),and at least one memory device 606. The memory device 606 may includeone or more packaged multichip semiconductor devices 608 such asdescribed above. The carrier substrate 602 is operably coupled with atleast one input device 610 such as, for example, a keyboard, a mouse, asensor or another computing device. The carrier substrate 602 is alsooperably coupled with at least one output device 612 such as, forexample, a printer, a monitor, an actuator or another computing device.Alternatively, the packaged multichip semiconductor device 608 may becoupled directly with the carrier substrate 602.

Specific embodiments have been shown by way of example in the drawingsand have been described in detail herein; however, the invention may besusceptible to various modifications and alternative forms. It should beunderstood that the invention is not intended to be limited to theparticular forms disclosed. Rather, the invention includes allmodifications, equivalents, and alternatives falling within the spiritand scope of the invention as defined by the following appended claims.

1. A semiconductor device package, comprising: a plurality ofsemiconductor dice, each semiconductor die of the plurality having aback surface, an active surface and a plurality of signal connectiondevices on the active surface; and a substrate having an attachmentsurface, an opposing surface and a plurality of substrate openingsformed therethrough, wherein each of the plurality of signal connectiondevices is positioned in one of the plurality of substrate openings andthe active surfaces of the plurality of semiconductor dice are adheredto the attachment surface of the substrate permitting exposure of theplurality of signal connection devices through the plurality ofsubstrate openings.
 2. The semiconductor device package of claim 1,further comprising a molding layer disposed over the attachment surfaceof the substrate and the back surfaces of the plurality of semiconductordice.
 3. The semiconductor device package of claim 2, wherein themolding layer comprises a material which is capable of withstanding atemperature of up to about 300° C. without substantial degradationthereof.
 4. The semiconductor device package of claim 1, furthercomprising: a first dielectric layer disposed on the opposing surface ofthe substrate; and a plurality of first dielectric openings in the firstdielectric layer exposing the plurality of signal connection devicestherethrough.
 5. The semiconductor device package of claim 4, furthercomprising: a first circuit layer disposed over the first dielectriclayer electrically connected to the plurality of signal connectiondevices; an outermost dielectric layer having a plurality of holesformed therethrough, the outermost dielectric layer being disposed overthe first circuit layer; and a plurality of conductive bumps disposed inthe plurality of holes of the outermost dielectric layer andelectrically coupled with the first circuit layer.
 6. The semiconductordevice package of claim 4, further comprising: a first circuit layerdisposed over the first dielectric layer electrically connected to theplurality of signal connection devices; at least one additionaldielectric layer, having at least one additional plurality of openingsformed therethrough; and at least one additional circuit layer disposedover the at least one additional dielectric layer electrically coupledwith the first circuit layer; an outermost dielectric layer having aplurality of holes formed therethrough, the outermost dielectric layerbeing disposed over the at least one additional circuit layer; and aplurality of conductive bumps disposed in the plurality of holes of theoutermost dielectric layer and electrically coupled with the at leastone additional circuit layer.
 7. The semiconductor device package ofclaim 1, wherein the substrate comprises a silicon wafer.
 8. Thesemiconductor device package of claim 1, wherein the plurality of signalconnection devices is selected from the group consisting of gold studbumps, copper stud bumps, and plated stud bumps.
 9. The semiconductordevice package of claim 1, wherein each of the plurality of substrateopenings exhibits a depth which is at least as great as or greater thana height of each of the plurality of signal connection devices.
 10. Thesemiconductor device package of claim 1, further comprising a layer ofdie attach material disposed between and adhering the active surface ofeach of the plurality of semiconductor dice and the attachment surfaceof the substrate.
 11. The semiconductor device package of claim 10,wherein the layer of die attach material comprises a material selectedfrom the group consisting of an epoxy material, a polyimide material,and benzocyclobutene.
 12. The semiconductor device package of claim 10,wherein the layer of die attach material exhibits a dielectric constantof up to about three.
 13. A memory device, comprising: a carriersubstrate; a plurality of electrical contacts coupled with electricalcircuitry formed in the carrier substrate; and at least onesemiconductor device package coupled with the electrical circuitry inthe carrier substrate, each of the at least one semiconductor devicepackage comprising: a plurality of semiconductor dice, eachsemiconductor die of the plurality having a back surface, an activesurface and a plurality of signal connection devices on the activesurface; and a substrate having an attachment surface, an opposingsurface and a plurality of substrate openings formed therethrough,wherein each of the plurality of signal connection devices is positionedin one of the plurality of substrate openings and the active surfaces ofthe plurality of semiconductor dice are adhered to the attachmentsurface of the substrate permitting exposure of the plurality of signalconnection devices through the plurality of substrate openings.
 14. Acomputing system, comprising: a processor; at least one input deviceoperably coupled with the processor; at least one output device operablycoupled with the processor; and a memory device operably coupled withthe processor, the memory device comprising; a plurality ofsemiconductor dice, each semiconductor die of the plurality having aback surface, an active surface and a plurality of signal connectiondevices on the active surface; and a substrate having an attachmentsurface, an opposing surface and a plurality of substrate openingsformed therethrough, wherein each of the plurality of signal connectiondevices is positioned in one of the plurality of substrate openings andthe active surfaces of the plurality of semiconductor dice are adheredto the attachment surface of the substrate permitting exposure of theplurality of signal connection devices through the plurality ofsubstrate openings.
 15. A semiconductor device package, comprising: aplurality of semiconductor dice, each semiconductor die of the pluralityhaving a back surface, an active surface and a plurality of signalconnection devices on the active surface; and a substrate having aplurality of cavities formed in a first surface of the substrate,wherein each semiconductor die of the plurality is disposed in one ofthe plurality of cavities with the back surface of each semiconductordie facing a base of its respective one of the plurality of cavities.16. The semiconductor device package of claim 15, further comprising: afirst dielectric layer disposed on the first surface of the substrateand upon the active surface of each of the plurality of semiconductordice; and a plurality of first dielectric openings in the firstdielectric layer exposing the plurality of signal connection devicestherethrough.
 17. The semiconductor device package of claim 16, furthercomprising: a first circuit layer disposed over the first dielectriclayer electrically connected to the plurality of signal connectiondevices; an outermost dielectric layer having a plurality of holesformed therethrough, the outermost dielectric layer being disposed overthe first circuit layer; and a plurality of conductive bumps disposed inthe plurality of holes of the outermost dielectric layer andelectrically coupled with the first circuit layer.
 18. The semiconductordevice package of claim 16, further comprising: a first circuit layerdisposed over the first dielectric layer electrically connected to theplurality of signal connection devices; at least one additionaldielectric layer, having at least one additional plurality of openingsformed therethrough; and at least one additional circuit layer disposedover the at least one additional dielectric layer electrically coupledwith the first circuit layer; an outermost dielectric layer having aplurality of holes formed therethrough, the outermost dielectric layerbeing disposed over the at least one additional circuit layer; and aplurality of conductive bumps disposed in the plurality of holes of theoutermost dielectric layer and electrically coupled with the at leastone additional circuit layer.
 19. The semiconductor device package ofclaim 15, wherein the substrate comprises a silicon wafer.
 20. Thesemiconductor device package of claim 15, wherein the plurality ofsignal connection devices comprises bond pads.
 21. The semiconductordevice package of claim 15, wherein each of the plurality of cavitiesexhibits a same depth which is at least equal to or greater than aheight of each the plurality of semiconductor dice.
 22. Thesemiconductor device package of claim 15, further comprising a layer ofdie attach material disposed in the plurality of cavities and adheringthe back surface of each of the plurality of semiconductor dice to thebase of its respective one of the plurality of cavities.
 23. Thesemiconductor device package of claim 22, wherein the layer of dieattach material comprises a material selected from the group consistingof an epoxy material, a polyimide material, and benzocyclobutene. 24.The semiconductor device package of claim 22, wherein the layer of dieattach material exhibits a dielectric constant of up to about three. 25.A memory device, comprising: a carrier substrate; a plurality ofelectrical contacts coupled with electrical circuitry formed in thecarrier substrate; and at least one semiconductor device package coupledwith the electrical circuitry in the carrier substrate, each of the atleast one semiconductor device package comprising: a plurality ofsemiconductor dice, each semiconductor die of the plurality having aback surface, an active surface and a plurality of signal connectiondevices on the active surface; and a substrate having a plurality ofcavities formed in a first surface of the substrate, wherein eachsemiconductor die of the plurality is disposed in one of the pluralityof cavities with the back surface of each semiconductor die facing abase of its respective one of the plurality of cavities.
 26. A computingsystem, comprising: a processor; at least one input device operablycoupled with the processor; at least one output device operably coupledwith the processor; and a memory device operably coupled with theprocessor, the memory device comprising; a plurality of semiconductordice, each semiconductor die of the plurality having a back surface, anactive surface and a plurality of signal connection devices on theactive surface; and a substrate having a plurality of cavities formed ina first surface of the substrate, wherein each semiconductor die of theplurality is disposed in one of the plurality of cavities with the backsurface of each semiconductor die facing a base of its respective one ofthe plurality of cavities.